A GaAlAs laser was developed which dichroically combines six single-mode 830 nm diodes in a 100 Angstrom total bandpass. The laser is designed to produce 250 mW peak power at a pulse rate of greater than SOO Mpps. Single mode operation of each diode is necessary since diode-to-diode channel spacing is only 20 Angstroms. Use of an etalon for each diode maintains single mode operation in the presence of wideband modulation. The diode mount, a universal header, accommodates diodes from various manufacturers and includes an impedance matching network for the diode as well as a thermistor and heater for diode closed-loop temperature control. Diffraction-limited optics are used to maximize the combined beam far field irradiance for free-space applications. Since the diodes are strongly linearly polarized, two six-diode lasers may be added using polarization combining to produce 500 mw peak power in a 100 Angstrom total bandpass.