Paper
15 May 1986 Invited Paper Radiation-Hardened Optoelectronic Components: Detectors
James J. Wiczer
Author Affiliations +
Abstract
In this talk, we will survey recent research in the area of radiation hardened optical detectors. We have studied conventional silicon photodiode structures, special radiation hardened silicon photodiodes, and special double heterojunction AlGaAs/GaAs photodiodes in neutron, gamma, pulsed x-ray and charged particle environments. We will present results of our work and summarize other research in this area. Our studies have shown at detectors can be made to function acceptably after exposures to neutron fluences of 1015 n/cm2, total dose gamma exposures of 108 rad (Si), and flash x-ray environments of 108 rad/sec (Si). We will describe detector structures that can operate through these conditions, pre-rad and post-rad operational characteristics, and experimental conditions that produced these results.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James J. Wiczer "Invited Paper Radiation-Hardened Optoelectronic Components: Detectors", Proc. SPIE 0616, Optical Technologies for Communication Satellite Applications, (15 May 1986); https://doi.org/10.1117/12.961061
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CITATIONS
Cited by 11 scholarly publications.
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KEYWORDS
Photodiodes

Silicon

Gallium arsenide

Electrons

Photons

Semiconductors

Active optics

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