12 March 1986 Amorphous Silicon Alloy Photoreceptors
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Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961077
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
Abstract
Amorphous silicon (a-Si) alloy semiconductors are becoming increasingly important in electrophotographic applications. Photoreceptor devices based on these materials exhibit improved performance for many applications and photocopiers and laser printers using these devices are now in commercial production. Fundamental differences in the chemistry and physics of a-Si alloys, as compared to the more conventionally used amorphous chalcogenide alloys, result in differences in the way electrophotographic devices are fabricated and used. This paper will review the construction and operation of a-Si alloy photoreceptors contrasting them with amorphous chalcogenide alloy devices with particular emphasis on aspects which result from fundamental differences in the physics and chemistry of these two classes of amorphous semiconductors.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. J. Hudgens, S. J. Hudgens, } "Amorphous Silicon Alloy Photoreceptors", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961077; https://doi.org/10.1117/12.961077
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