Bulk Limitation Effects in Amorphous Silicon Alloy Diodes

V. Cannella; J. McGill; Z. Yaniv; M. Silver

doi:10.1117/12.961072

12 March 1986 Bulk Limitation Effects in Amorphous Silicon Alloy Diodes

V. Cannella, J. McGill, Z. Yaniv, M. Silver

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961072
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Because of the growing use of amorphous silicon alloys in microelectronic applications utilizing both the PIN and NIN structures, we have undertaken a study of the limitation imposed by the bulk intrinsic layers. In the former at voltages above approximately 0.8V, the bulk controlled current is recombination limited while in the latter it is space charge limited. As a consequence, the magnitude of the currents as well as the time and frequency responses are very different. Data documenting these differences are presented along with a model to explain these results.

Citation Download Citation

V. Cannella, J. McGill, Z. Yaniv, and M. Silver "Bulk Limitation Effects in Amorphous Silicon Alloy Diodes", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961072

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