12 March 1986 Contact Resistance Measurement Technique For Amorphous Semiconductors
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Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961073
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Schade, H. Schade, Z E. Smith, Z E. Smith, } "Contact Resistance Measurement Technique For Amorphous Semiconductors", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); doi: 10.1117/12.961073; https://doi.org/10.1117/12.961073

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