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12 March 1986 High-barrier rectifying junctions with amorphous silicon alloy electrodes and their application to FET's for LSI's
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Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961069
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
Abstract
Properties of "metallic" amorphous silicon alloys and their application to the gate electrode of an FET are described. Amorphous Si-Ge-B prepared by low-pressure CVD and a-Si-Be prepared by RF-sputtering are both metallic in the sense that the density of electron states at and near the Fermi level is finite, though the electron states are localized in contrast to those of metals. The former forms a rectifying junction similar to a metal-semiconductor Schottky-barrier junction with the n-type crystalline semiconductor, while the latter with the p-type one. Barrier heights of 1 V and 0.8 V are obtained for a-Si-Ge-B/n-type GaAs and a-Si-Be/p-type Si junctions, respectively. Such high barriers have not previously been obtained for metal-semiconductor junctions. The performance of FET's is improved by applying these high-barrier amorphous-crystalline junctions to the gate.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsumi Murase and Masamitsu Suzuki "High-barrier rectifying junctions with amorphous silicon alloy electrodes and their application to FET's for LSI's", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961069
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