In situ Studies Of The Bulk And Interface Structure Of a-Si:H

R. W. Collins

doi:10.1117/12.961074

12 March 1986 In situ Studies Of The Bulk And Interface Structure Of a-Si:H

R. W. Collins

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961074
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

In this paper, recent results of a study of interface formation and microstructural evolution during the growth of hydrogenated amorphous silicon (a-Si:H) will be reviewed. In situ ellipsometry experiments using a photon energy of 3.4 eV have been applied to characterize the thin film nucleation process under different conditions of film preparation. In addition, monolayer sensitivity to changes in the modulation depth of surface roughness layers is achieved during growth. Spectroscopic ellipsometry measurements have been used to establish the absolute thickness of roughness layers at the surface of a-Si:H and at the a-Si0₂/a-Si:H interface. An in situ study of a-Si:H/a-SiNx:H/a-Si:H deposition reveals an asymmetry in the interface structure depending on the order of deposition. These are a sampling of the important results that establish ellipsometry as an ideal in situ probe of the growth morphology of thin film amorphous semiconductors.

Citation Download Citation

R. W. Collins "In situ Studies Of The Bulk And Interface Structure Of a-Si:H", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961074

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