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12 March 1986 Multilayered Amorphous Silicon Photoreceptors And Their Application To Optical Printers
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Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986)
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
The preparation and properties of multilayered glow-discharge a-Si:H photoreceptors are described. It is shown that a high-rate deposition of the intrinsic layer of a Al/p/i/a-Sic structure with no stress is possible by an ordinary glow-discharge method . The composition and thickness of the blocking layers proved to affect particularly the dark decay time, residual voltage and photosensitivity. Inserting a a-Sii-xGex layer into the intrinsic layer was shown very effective in sensitizing the infrared region. A high-speed laser-beam printing system with a printing speed of 20000 lines/min for 8LPI was realized by using this sensitized photoreceptor.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Kakinuma, S. Nishikawa, T. Watanabe, and K. Nihei "Multilayered Amorphous Silicon Photoreceptors And Their Application To Optical Printers", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986);


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