Picosecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon

Dale M. Roberts; Terry L. Gustafson

doi:10.1117/12.961075

12 March 1986 Picosecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon

Dale M. Roberts, Terry L. Gustafson

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961075
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

We measure picosecond photoinduced absorption in a low defect sample of hydrogenated amorphous silicon. Our results indicate that both the imaginary and real parts of the complex index of refraction contribute to the observed decay of the induced transmittance. We present two methods for obtaining the undistorted decay of the induced absorption. We show that the decay of the induced absorption is significantly different at carrier densities of 5.9 x 10¹⁷ cm" and 2.4 x 10¹⁸ cm'. The lower carrier density decay suggests that the data are consistent with the model for dispersive transport in amorphous materials.

Citation Download Citation

Dale M. Roberts and Terry L. Gustafson "Picosecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous Silicon", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961075

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