Progress In Two And Three Terminal Amorphous Silicon Switching Devices For Matrix Addressed LeDs

Z. Yaniv; V. Cannella; A. Lien; J. McGill; W. den Boer

doi:10.1117/12.961068

12 March 1986 Progress In Two And Three Terminal Amorphous Silicon Switching Devices For Matrix Addressed LeDs

Z. Yaniv, V. Cannella, A. Lien, J. McGill, W. den Boer

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961068
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

The use of a-Si alloy thin film devices to serve as pixel switching elements in active matrix addressed liquid crystal displays is very attractive. The technology exists to produce uniform high quality a-Si alloy materials over large areas very efficiently and economically. Even though the highest mobility achieved in a-Si TFTs is 1 cm²/V-sec, the currents and speed available with 10-20 μm channel lengths is more than adequate for switching LCD pixels, and the low off-current levels are ideal for holding pixel charge. To date, must of the research and development effort on active matrix LCDs is concentrated on a-Si TFTs. The success of TFT based displays for large area flat panel displays has been limited so far, mainly due to the difficulty of obtaining a high quality gate dielectric by plasma deposition and due to the presence of crossing conductors on the same substrate. Both of these factors increase the probability of defects in the display. When a two terminal sandwich device is used, on the other hand, no gate dielectric is required, and crossing lines are unnecessary, hence a higher yield can be expected.

Citation Download Citation

Z. Yaniv, V. Cannella, A. Lien, J. McGill, and W. den Boer "Progress In Two And Three Terminal Amorphous Silicon Switching Devices For Matrix Addressed LeDs", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961068

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