uc-Si:H:F Thermopile Power Sensors

Setsuo Kodato

doi:10.1117/12.961084

12 March 1986 μc-Si:H:F Thermopile Power Sensors

Setsuo Kodato

Proceedings Volume 0617, Amorphous Semiconductors for Microelectronics; (1986) https://doi.org/10.1117/12.961084
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Heavy doped a-Si:H:F thin film containing a microcrystalline phase (pc-S:H:F) has properties of a very high dark-conductivity and a large thermoelectric power. Wip this pc-Si:H:F film, high performance thermopile has been developed for power sensors. ' The film was deposited on glass substrate, using SiH₄ + SiF₄ gases, by radio frequeycy glow discharge decomposition. The film showed a largg dark-aonductivity of 33 S cm^-1 (the highest value), and a large thermoelectric power of 250 pV/K for the p-type and -200 pV/K for the n-type, respectively. The thermopile power sensor was produced having power sensitivity of 1.5 mV/mW and the linearity being better than 1%. A new type of high performance wideband level meter, using the amorphous silicon thin-film type thermopile rms-value-detector was developed and has been put into practical use.

Citation Download Citation

Setsuo Kodato "μc-Si:H:F Thermopile Power Sensors", Proc. SPIE 0617, Amorphous Semiconductors for Microelectronics, (12 March 1986); https://doi.org/10.1117/12.961084

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