A general method for producing high purity semiconductor materials has been developed and successfully applied to the production of chalcogenide glasses. One glass composition designated AMTIR-I, a Ge-As-Se glass, has been produced at the rate of 4,000 lbs per year over the last several years. The method combines element purification, compounding and casting into one operation. Absorption levels based on actual quality control data obtained over the last 3-4 years will be presented. Factors affecting the absorption will be discussed. Application of the method to produce a low absorption chalcogenide glass suitable for fiber fabrication will also be discussed. In addition, specific results attained for AMTIR-2, an As-Se glass, will also be presented. The general method has been applied to the preparation of large plates of cadmium tellu-ride. A three zone furnace system is used to vaporize, condense and compound near stoichiometric quantities of 5-nines grade cadmium and tellurium. A controlled directional freeze results in circular plates up to 25 cm in diameter which are free of voids or gross inclusions and contain large areas of single crystal. A heat treating process under cadmium and tellurium vapor has been developed which results in a 100 fold improvement in absorption over non-heat treated material. Absorption coefficients less then 0.002 cm-l have been observed for 2.5 to 25μm wavelength on samples ranging up to 2 cm in thickness. The attainment of near theoretical transmission, as expected, is dependent upon the sample thickness, anneal temperature, pressure of cadmium or tellurium used in the anneal, and length of time of treatment. Details of the pro-cedure will be presented.