Laser Assisted Etching For Microelectronic Applications

Carol I.H. Ashby

doi:10.1117/12.961150

5 August 1986 Laser Assisted Etching For Microelectronic Applications

Carol I.H. Ashby

Proceedings Volume 0621, Manufacturing Applications of Lasers; (1986) https://doi.org/10.1117/12.961150
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

There are four general types of laser-assisted processes which have been employed for dry etching organics, semiconductors, and metals used in microelectronics [1]. The first is laser ablation or laser-induced evaporation, which is physical rather than chemical in nature [2-7]. The second type of process uses the laser to heat the material surface, thereby increasing the rate of a thermally activated chemical reaction [8-10]. The third is gas-phase photochemical etching in which the laser is used to generate the reactive gas-phase species responsible for etching a semiconductor or metal [11-16]. The fourth type is surface photochemical etching in which the laser is used to create the photogenerated carriers responsible for etching; highly selective etching can be achieved by capitalizing on the surface electronic properties which influence carrier generation or subsequent behavior [17-20]. These four laser-assisted dry etching methods will be reviewed, with special emphasis on the advantages and disadvantages of the three chemical processes for etching semiconductor materials.

Citation Download Citation

Carol I.H. Ashby "Laser Assisted Etching For Microelectronic Applications", Proc. SPIE 0621, Manufacturing Applications of Lasers, (5 August 1986); https://doi.org/10.1117/12.961150

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