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5 August 1986 Void Detection In Semiconductor Shielded Power Cable Insulation By Measurements Of Submillimeter Radiation Scattering
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Proceedings Volume 0621, Manufacturing Applications of Lasers; (1986) https://doi.org/10.1117/12.961152
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
Abstract
The feasibility of detecting voids in triple extruded power cable insulation by measure-ment of Mie scatter power of incident farinfrared (FIR) laser radiation is explored. Measurements of scatter power of a 100-250 um range of void sizes in polyethylene insulation show that void scatter power and experimental SNR decrease as wavelength increases from 119 to 447 um. Extrapolations of experimental data to larger void sizes show that detection of voids larger than 250 on in polyethylene insulation at 447 pm wavelength would have acceptable SNR using direct detection methods with no noise reduction techniques. Triple extruded insulation was modeled by taking into account the attenuation of an insulation shield at 447 um with 14 percent transmission. Modeling results show simulated detection of voids in triple extruded insulation would provide acceptable SNR for detection of voids larger than 250 um using higher laser irradiance levels than those required for nonshielded, or tandem extruded, insulation.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. R. Cunningham, P. K. Cheo, and J. D. Farina "Void Detection In Semiconductor Shielded Power Cable Insulation By Measurements Of Submillimeter Radiation Scattering", Proc. SPIE 0621, Manufacturing Applications of Lasers, (5 August 1986); https://doi.org/10.1117/12.961152
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