26 June 1986 Characteristics Of Rapidly Grown Thin Oxides
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Abstract
Thin oxides with thicknesses in the range of 100 - 350 Å have been grown by rapid thermal oxidation using an ambient gas mixture of oxygen and argon, and pure oxygen. Growth rates as a function of temperature and time have been studied. Silicon samples of both <111> and <100> crystal orientation have been studied. Thickness uniformities for steady state and transient annealing have also been measured.
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S. Mehta, S. Mehta, C. J. Russo, C. J. Russo, D. Hodul, D. Hodul, } "Characteristics Of Rapidly Grown Thin Oxides", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961199; https://doi.org/10.1117/12.961199
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