26 June 1986 Epitaxial Growth On SIMOX Wafers
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Abstract
The top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin (less than 500 nm) and because of the material structure of the SIMOX wafer, special care has to be exercised in order to obtain desirable epitaxial growth. This paper describes the unique problems of epitaxial growth on SIMOX.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hon Wai Lam, Hon Wai Lam, } "Epitaxial Growth On SIMOX Wafers", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961207; https://doi.org/10.1117/12.961207
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