Increasing The Conductivity Of Polycrystalline Silicon By Rapid Thermal Processing Before And After Ion Implantation

R. B. Gregory; S. R. Wilson; W. M. Paulson; S. J. Krause; J. A. Leavitt; L. C. McIntyre Jr.; J. L. Seerveld; P. Stoss

doi:10.1117/12.961200

26 June 1986 Increasing The Conductivity Of Polycrystalline Silicon By Rapid Thermal Processing Before And After Ion Implantation

R. B. Gregory, S. R. Wilson, W. M. Paulson, S. J. Krause, J. A. Leavitt, L. C. McIntyre Jr., J. L. Seerveld, P. Stoss

Author Affiliations +

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961200
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Polycrystalline silicon films on oxidized silicon wafers have been subjected to rapid thermal processing before arsenic or boron ion implantation (pre-implant anneal). The films have then been ion implanted and given another rapid thermal process step to activate the dopant and repair the implant damage. The pre-implant anneal has caused the as-deposited grain size to increase by approximately a factor of ten. After the activation anneal these films have shown a 10 to 100% lower sheet resistance than films which did not receive a pre-implant anneal. The increase in grain size by the pre-implant anneal reduced the grain boundary area and as a result reduced the amount of dopant trapped in the grain boundaries relative to that which was actually inside the grains.

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R. B. Gregory, S. R. Wilson, W. M. Paulson, S. J. Krause, J. A. Leavitt, L. C. McIntyre Jr., J. L. Seerveld, and P. Stoss "Increasing The Conductivity Of Polycrystalline Silicon By Rapid Thermal Processing Before And After Ion Implantation", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961200

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