26 June 1986 Influence Of Interfacial Oxide On Ion Mixing Of Al Bilayers: Measurement Of Interfacial Oxide
Author Affiliations +
Abstract
The elastic resonance scattering of 3.05 MeV 4He++by 160 is studied for the case where the oxygen is present as an interfacial impurity between a Si substrate and a metallic overlain film. A simple model is developed and experimentally tested to describe the effect of the overlayer on the excitation curve and on the incident beam energy required to obtain resonance. This analytical method is very useful to study the influence of interfacial oxygen on the reaction of metallic overlayers, as shown by specific results with Al.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
X.-A . Zhao, X.-A . Zhao, T. C. Banwell, T. C. Banwell, M-A . Nicolet, M-A . Nicolet, } "Influence Of Interfacial Oxide On Ion Mixing Of Al Bilayers: Measurement Of Interfacial Oxide", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961216; https://doi.org/10.1117/12.961216
PROCEEDINGS
6 PAGES


SHARE
Back to Top