Properties And Applications Of Molecular Beam Epitaxial Silicides

K. L. Wang

doi:10.1117/12.961212

26 June 1986 Properties And Applications Of Molecular Beam Epitaxial Silicides

K. L. Wang

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961212
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Metal silicides are now being used as an integral part of microelectronic technology. The possiblility of epitaxial deposition affords additional potentials for many device and integrated circuit applications. Molecular beam epitaxy (MBE) has been successfully used to grow morphologically uniform epi-CoSi₂ and Ni₂Si₂ films on Si although a significant lattice mismatch is present. Using MBE, multi-layered structures have also been demonstrated without observable interdiffusion among the layers. Apparently, the strain is totally accommodated in the pseudomorphic growth. In this review, the crystallinity and morphological quality of epitaxial heterostructures grown by MBE and solid phase epitaxy will be discussed. The crystallinity is characterized with Rutherford backscattering spectroscopy, electron loss spectroscopy and x-ray diffraction while the surface morphology is determined from scanning electron microscopy. Uniform silicide films are grown successfully if the film thickness is limited. More recent works on the study of Si/Silicide/Si along with other multi-quantum well structures are discussed. Demonstrated and potential device applications using these MBE films are described.

Citation Download Citation

K. L. Wang "Properties And Applications Of Molecular Beam Epitaxial Silicides", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961212

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