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26 June 1986 Proton Bombarded Gallium Arsenide: Opto-Electronic Effects
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Abstract
Proton bombardment of doped gallium arsenide is known to produce electrical compensation and optical changes within the implanted material. In semi-conductor processing this technique has found wide application ranging from electrical device isolation to laser fabrication. This paper addresses recent advances in this technology with emphasis on opto-electronic developments. Components and devices formed through this process are reviewed as well as the optical and electrical properties of the bombarded material.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Zavada, H. A. Jenkinson, and D. C. Larson "Proton Bombarded Gallium Arsenide: Opto-Electronic Effects", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961203
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