Rapid Thermal Growth Of Thin Insulators On Si (Invited)

Mehrdad M. Moslehi; Krishna C. Saraswat; Steven C. Shatas

doi:10.1117/12.961198

26 June 1986 Rapid Thermal Growth Of Thin Insulators On Si (Invited)

Mehrdad M. Moslehi, Krishna C. Saraswat, Steven C. Shatas

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961198
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Rapid thermal processing of silicon in oxygen and ammonia reactive ambients has been performed successfully to grow thin layers of Si0₂, silicon nitride, and silicon nitroxide for high quality gate insulators of submicron CMOS VLSI.

Citation Download Citation

Mehrdad M. Moslehi, Krishna C. Saraswat, and Steven C. Shatas "Rapid Thermal Growth Of Thin Insulators On Si (Invited)", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961198

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