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26 June 1986 Silicon-On-Insulator Technology By Heteroepitaxial Growth Of Fluorides
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Abstract
Progress in the growth and fabrication of silicon-on-insulator (SOI) structures, based on heteroepitaxial growth of CaF2 films on silicon, is reviewed. This approach has led to prototype SOI structures, such as MOSFETS, with promising performance. The combination of silicide and fluoride heteroepitaxy on silicon may lead eventually to multiple level SOI device structures.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robin F. C. Farrow "Silicon-On-Insulator Technology By Heteroepitaxial Growth Of Fluorides", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961208
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