26 June 1986 Structure And Electrical Properties Of Metal-GaAs Interfaces
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Abstract
The structure and related electrical properties of ohmic Au-Ni-Ge contacts, and Schottky: TiSi2 and Au contacts are reviewed in this paper. Defects present in GaAs beneath the metal (anion rich - As accumulation) were suggested to be responsible for Schottky level pinning. It was shown that residual oxygen on the GaAs surface prior to metal deposition can strongly influence the interface abruptness, contact parameters and reliability of both ohmic and Schottky contacts.
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Z. Liliental-Weber, Z. Liliental-Weber, } "Structure And Electrical Properties Of Metal-GaAs Interfaces", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961213; https://doi.org/10.1117/12.961213
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