26 June 1986 The Effects Of Rapid Thermal Annealing On Si-Implanted GaAs
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Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986); doi: 10.1117/12.961206
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States
Abstract
Undoped and Cr-doped LEC GaAs substrates were implanted with Si at 150 keV with doses from 4x1012 to 1x1014/cm2. The wafers were encapsulated with sputtered Si3Nt1 and annealed in a flash-lamp system at temperatures from 850 to 1025°C for times between 5 and 80 seconds. Channel dose implants into undoped LEC wafers give mobilities between 4700 and 4800 cm2/V-s for 1000°C, 5 sec. anneals, which are comparable with furnace annealed wafers. A sheet resistance of 61 ohms/sq and a mobility of 2500 cm2/V-s was obtained for a 1x1014/cm2 implant dose. Reproducible threshold voltages can be obtained for both undoped and Cr-doped substrates using rapid thermal annealing.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. N. Legge, W. M. Paulson, "The Effects Of Rapid Thermal Annealing On Si-Implanted GaAs", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); doi: 10.1117/12.961206; https://doi.org/10.1117/12.961206
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KEYWORDS
Semiconducting wafers

Gallium arsenide

Silicon

Annealing

Diffusion

Chromium

Semiconductors

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