13 October 1986 The CCD Flash Gate
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Abstract
Preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs. Experiments have shown that the application of an ultra-thin (less than 4a) layer of metal with high work function to the backside of the CCD can yield 100% internal quantum efficiency in the visible, UV, XUV and soft X-ray regions of the spectrum. Theory and solid state models describing the new technique (which we refer to as the CCD flash gate), plus a considerable amount of experimental data are discussed in this paper. Specific recommendations for use of the flash gate in present and future CODs are also reviewed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Janesick, James Janesick, Torn Elliott, Torn Elliott, Taher Daud, Taher Daud, Dave Campbell, Dave Campbell, } "The CCD Flash Gate", Proc. SPIE 0627, Instrumentation in Astronomy VI, (13 October 1986); doi: 10.1117/12.968134; https://doi.org/10.1117/12.968134
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