13 October 1986 The CCD Flash Gate
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Preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs. Experiments have shown that the application of an ultra-thin (less than 4a) layer of metal with high work function to the backside of the CCD can yield 100% internal quantum efficiency in the visible, UV, XUV and soft X-ray regions of the spectrum. Theory and solid state models describing the new technique (which we refer to as the CCD flash gate), plus a considerable amount of experimental data are discussed in this paper. Specific recommendations for use of the flash gate in present and future CODs are also reviewed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James Janesick, Torn Elliott, Taher Daud, Dave Campbell, "The CCD Flash Gate", Proc. SPIE 0627, Instrumentation in Astronomy VI, (13 October 1986); doi: 10.1117/12.968134; https://doi.org/10.1117/12.968134


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