Preliminary findings are presented for a new approach that significantly improves the quantum efficiency of the current generation of high-performance, thinned, backside illuminated silicon CCDs. Experiments have shown that the application of an ultra-thin (less than 4a) layer of metal with high work function to the backside of the CCD can yield 100% internal quantum efficiency in the visible, UV, XUV and soft X-ray regions of the spectrum. Theory and solid state models describing the new technique (which we refer to as the CCD flash gate), plus a considerable amount of experimental data are discussed in this paper. Specific recommendations for use of the flash gate in present and future CODs are also reviewed.
"The CCD Flash Gate", Proc. SPIE 0627, Instrumentation in Astronomy VI, (13 October 1986); doi: 10.1117/12.968134; https://doi.org/10.1117/12.968134