6 October 1986 High Performance GaAlAs LED Structures By Vapour Phase (MOCVD) Epitaxy
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Proceedings Volume 0630, Fibre Optics '86; (1986) https://doi.org/10.1117/12.963603
Event: Sira/Fibre Optics '86, 1986, London, United Kingdom
Abstract
LEDs have been fabricated by two routes using material grown by MOCVD in the GaAs/GaAlAs materials system. High internal quantum efficiencies have been achieved in both a simple junction isolated device and in a high specification proton isolated LED.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. M. Ash, R. M. Ash, R. R. Bradley, R. R. Bradley, N. W. Forbes, N. W. Forbes, } "High Performance GaAlAs LED Structures By Vapour Phase (MOCVD) Epitaxy", Proc. SPIE 0630, Fibre Optics '86, (6 October 1986); doi: 10.1117/12.963603; https://doi.org/10.1117/12.963603
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