A 2-Layer Resist System Derived From Trimethylsilylstyrene

S. A. MacDonald; R. D. Allen; N. J. Clecak; C. G. Willson; J. M.J. Frechet

doi:10.1117/12.963622

9 July 1986 A 2-Layer Resist System Derived From Trimethylsilylstyrene

S. A. MacDonald, R. D. Allen, N. J. Clecak, C. G. Willson, J. M.J. Frechet

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963622
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

This paper describes the design and preparation of a negative tone, oxygen etch resistant DUV photoresist. This two-component resist system is composed of an oxygen plasma etch resistant matrix resin, poly(trimethylsilylmethylstyrene), and a monomeric radical generator such as trichlorobenzene or 3,3'-diazidodiphenylsulfone.

Citation Download Citation

S. A. MacDonald, R. D. Allen, N. J. Clecak, C. G. Willson, and J. M.J. Frechet "A 2-Layer Resist System Derived From Trimethylsilylstyrene", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963622

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available