9 July 1986 A 2-Layer Resist System Derived From Trimethylsilylstyrene
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Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986); doi: 10.1117/12.963622
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States
Abstract
This paper describes the design and preparation of a negative tone, oxygen etch resistant DUV photoresist. This two-component resist system is composed of an oxygen plasma etch resistant matrix resin, poly(trimethylsilylmethylstyrene), and a monomeric radical generator such as trichlorobenzene or 3,3'-diazidodiphenylsulfone.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A. MacDonald, R. D. Allen, N. J. Clecak, C. G. Willson, J. M.J. Frechet, "A 2-Layer Resist System Derived From Trimethylsilylstyrene", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963622; https://doi.org/10.1117/12.963622
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KEYWORDS
Polymers

Oxygen

Halogens

Etching

Reactive ion etching

Deep ultraviolet

Image processing

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