9 July 1986 Optimized Material For Bottom Layer Of Trilevel Resist System
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Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986); doi: 10.1117/12.963655
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States
Abstract
Requirements for the bottom layer of the trilevel resist system are examined with the aid of the SAMPLE simulator. Some conventional positive photoresists and our new bottom layer material RG-3900B are evaluated as a bottom layer. RG-3900B is a phenolic resin mixed with a novel azide compound. It is found that RG-3900B has the following excellent optical properties with relatively short baking time at about 200°C; it strongly absorbs the exposing light and is transparent at visible regions for alignment. Therefore, when applied as a bottom layer, it minimizes linewidth variations on highly reflective substrate topography without degradation of alignment accuracy. RG-3900B has been successfully applied to our various devices with multilevel metalization to obtain fine patterns.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noboru Moriuchi, Seiichiro Shirai, Takao Iwayanagi, "Optimized Material For Bottom Layer Of Trilevel Resist System", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963655; https://doi.org/10.1117/12.963655
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KEYWORDS
Absorption

Reactive ion etching

Roentgenium

Aluminum

Etching

Reflection

Photoresist materials

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