9 July 1986 Preparation And Lithographic Properties Of Poly(Trimethylsilylmethyl Methacrylate-Co-Chloromethyl Styrene)
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Abstract
The random copolymer comprised of trimethylsilylmethyl methacrylate (SI) and chloromethyl styrene (CMS) is shown to function as a negative acting e-beam and deep UV resist. The resist is prepared using free radical solution polymerization techniques. Reactivity ratios were calculated using the least squares treatment of Fineman-Ross, and were determined to be 0.49 and 0.54 for SI and CMS, respectively. This material exhibits etching resistance in an 02 reactive ion etching discharge, and is applicable to bileveli pthographic processes. The resist system exhibits an e-beam and deep UV sensitivity (pg. ) equal to 1.95 11C/cm2 and 18mJ/cm2, respectively. The ratio of etching rates of the planarizing layer HPR-206 to this material is 12 to 1 in 02. Preliminary results indicate this system to have submicron resolution capability.
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Anthony E. Novembre, Anthony E. Novembre, Elsa Reichmanis, Elsa Reichmanis, Myrtle Davis, Myrtle Davis, } "Preparation And Lithographic Properties Of Poly(Trimethylsilylmethyl Methacrylate-Co-Chloromethyl Styrene)", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963620; https://doi.org/10.1117/12.963620
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