9 July 1986 Synthesis And Lithographic Characterization Of A Novel Organosilicon Novolac Resin
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Abstract
A novel terpolymer of a methylated phenol, p-trimethylsilylmethyl phenol and formaldehyde was synthesized. With a 9.7wt% Si content, the polymer displayed an RIE resistance 10 times greater than hard-baked HPR 204. The organosilicon novolac was employed as a base resin component of bilevel resist systems for both photo and electron-beam lithography. The low molecular weight polymer behaves as a positive resist when mixed with a dissolution inhibitor. In photo-lithography, the dissolution inhibitor was a diazoquinone based chemical which was converted to an acidic species during irradiation. In electron-beam lithography, poly (2-methyl-l-pentene sulfone) (PMPS), which depolymerizes upon electron-irradiation, functioned as the dissolution inhibitor. When the silylated novolac was used as a photoresist, coded 0.8μm line/space patterns were obtained with a sensitivity of -120 mJ/cm2. When employed as,an electron-beam resist coded 0.75μm line/space patterns were resolved with a dose of 8μC/cm4.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Regine G. Tarascon, Ann Shugard, Elsa Reichmanis, "Synthesis And Lithographic Characterization Of A Novel Organosilicon Novolac Resin", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); doi: 10.1117/12.963624; https://doi.org/10.1117/12.963624
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