30 June 1986 Aeble-150 E-Beam/Optical Hybrid Lithography
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Abstract
A hybrid lithography technique is described in which high resolution critical mask layers are fabricated by electron-beam lithography and less critical mask layers are fabricated optically. This approach permits the high resolution imaging capability of electron-beam lithography to be exploited while still maintaining the high throughput possible with optical lithography. The lithography equipment employed for these experiments is the Hughes/Perkin-Elmer AEBLE-150 prototype and a Canon FPA-143 4:1 projection aligner. A CMOS process test chip containing 16 two-millimeter subfields in a four by four array was used for alignment evaluation. The two patterns used to evaluate overlay accuracy were the mesa and gate layers. Three cases were examined: 1) electron-beam-written gate layer aligned to electron-beam-written mesa layer, 2) optically imaged gate layer aligned to electron-beam-written mesa layer, and 3) electron beam written features overlayed to optically defined features. In the last case both the optically and electron beam defined features were aligned to the electron-beam-written reference. The resulting peak overlay error accuracies are: 1) electron-beam to electron-beam with +/- 0.05 2) optical to electron-beam with +/- 0.10 μm, and 3) optical to electron-beam referenced to second electron-beam with +/- 0.15 μm. Additionally, the critical dimension control of electron-beam-written layers was +/- 0.04 μm for 0.6 }ten feature sizes.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenneth A. Barnett, Robert A. Metzger, and Oberdan W. Otto "Aeble-150 E-Beam/Optical Hybrid Lithography", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963664; https://doi.org/10.1117/12.963664
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