30 June 1986 Application Of Ghost Proximity Effect Correction Method To Conventional And Nonswelling Negative E-Beam Resists
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Abstract
The proximity effect in electron-beam lithography can be corrected by the "GHOST" method, in which an additional field exposure with defocused beam at lower dose is used to compensate proximity effect. This technique was applied to CMS-EX(R) and RD-2000N negative resist successfully. Excellent linewidth control was confirmed by an electrical test method. A parameter of development rate ratio was used to characterize the performance of nonswelling negative resist.
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Huayu Liu, Huayu Liu, E. D. Liu, E. D. Liu, } "Application Of Ghost Proximity Effect Correction Method To Conventional And Nonswelling Negative E-Beam Resists", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963691; https://doi.org/10.1117/12.963691
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