Focused Ion Beam System For Submicron Lithography

R. Aihara; H. Sawaragi; H. Morimoto; T. Kato

doi:10.1117/12.963685

30 June 1986 Focused Ion Beam System For Submicron Lithography

R. Aihara, H. Sawaragi, H. Morimoto, T. Kato

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963685
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Focused ion beam (FIB) technology has capabilities for resist exposure, maskless implantation, and other applications for semicon-ductor devices with submicron dimensions. Focused ion beam systems, the JIBL-100 and 150, are able to obtain a finely focused ion probe with a diameter less than 0.1 micron using a liquid metal ion (LMI) sources. The JIBL-100 system has been developed for fundamental experiments of FIB technology. The JIBL-150 system is a lithography system controlled by a DEC-VAX11/730 and HP9920 computers. Using these systems, some experiments for sub-half micron lithography have been demonstrated. Both single and double charge Be and Si ion beams are obtainable from an Au-Si-Be LMI source. They can be used for resist exposure with various resist thickness and resist profiles. For example, a T-shaped resist profile was fabricated using 200 keV Be and Si ion beams.

Citation Download Citation

R. Aihara, H. Sawaragi, H. Morimoto, and T. Kato "Focused Ion Beam System For Submicron Lithography", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963685

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