30 June 1986 Focused Ion Beam System For Submicron Lithography
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Abstract
Focused ion beam (FIB) technology has capabilities for resist exposure, maskless implantation, and other applications for semicon-ductor devices with submicron dimensions. Focused ion beam systems, the JIBL-100 and 150, are able to obtain a finely focused ion probe with a diameter less than 0.1 micron using a liquid metal ion (LMI) sources. The JIBL-100 system has been developed for fundamental experiments of FIB technology. The JIBL-150 system is a lithography system controlled by a DEC-VAX11/730 and HP9920 computers. Using these systems, some experiments for sub-half micron lithography have been demonstrated. Both single and double charge Be and Si ion beams are obtainable from an Au-Si-Be LMI source. They can be used for resist exposure with various resist thickness and resist profiles. For example, a T-shaped resist profile was fabricated using 200 keV Be and Si ion beams.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Aihara, H. Sawaragi, H. Morimoto, and T. Kato "Focused Ion Beam System For Submicron Lithography", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963685; https://doi.org/10.1117/12.963685
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