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30 June 1986 Influence Of Sputter Effects On The Resolution In X-Ray Mask Repair
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Abstract
When Focused-Ion-Beam Milling is used for repairing opaque defects on X-ray masks, the specific sputter effects such as redeposition of the sputtered material and reflection of the primary ions influence the obtained resolution appreciably. This physical behaviour leads to edge angles 4 90° and to a shift of the milled pattern as well as to a specific kind of 'proximity effect'. That means, the repair of a defect could generate new defects due to the redeposited material which have to be corrected again. Furthermore, the achievable aspect ratio which depends on the sputter yield is limited to approximately 5 for gold under practical conditions.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Betz, A. Heuberger, N. P. Economou, and D . C. Shaver "Influence Of Sputter Effects On The Resolution In X-Ray Mask Repair", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963670
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