30 June 1986 Mask Technology For X-Ray Step-And-Repeat System
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Abstract
An x-ray mask suitable for use with a new x-ray step-and-repeat alignment system [1] is introduced. Design features are described which distinguish this stepper mask from the full-field x-ray mask reported earlier [2]. Processes for manufacturing such masks, patterned additively or subtractively, are described, as is the e-beam imaging technique. Finally, mask distortion results are presented and discussed with relation to mask design.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. R. Shimkunas, A. R. Shimkunas, J. J. LaBrie, J. J. LaBrie, P. E. Mauger, P. E. Mauger, J. J. Yen, J. J. Yen, "Mask Technology For X-Ray Step-And-Repeat System", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963675; https://doi.org/10.1117/12.963675
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