30 June 1986 Micron Features In III-V Materials By Photoelectrochemical Etching Of Focused Ion Beam Induced Damage Patterns
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Abstract
A method of patterning n-type GaAs, InP, InGaAs and InGaAsP by photoelectrochemical (PEC) etching in conjunction with a submicron focused gallium ion beam (FIB) at low dose is de-scribed. The ion beam is used to produce damage in a desired pattern on the material. Subsequent PEC etching of the material reveals the ion induc5d featurs in relief. The procedure is highly sensitive, requiring a dose of only 5x109 ions/cm2 (about 1 ion every 1500Å) for the differential etch to become apparent. The sensitivity allows rapid pattern generation in our FIB system.
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K. D Cummings, L. R. Harriott, G. c. Chi, F. W. Ostermayer, "Micron Features In III-V Materials By Photoelectrochemical Etching Of Focused Ion Beam Induced Damage Patterns", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963673; https://doi.org/10.1117/12.963673
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