30 June 1986 Novel Submicron Isolation Technique Of Gaas Active Layer Using Fibi-Mbe
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Experiments on GaAs polycrystal formation for isolation were made by using a combined system of a focused-ion-beam implanter with molecular-beam-epitaxy equipment. We obtained 0.7-μm-wide micropolycrystals of an aspect ratio of 3.5 above 160-keV-Be-implanted (more than lx1015 cm-2) GaAs epilayers. Micropolycrystals exhibited almost planar form and high resistivity even with donor doping of 3.2x10l8 cm-3. Single crystal regions adjacent to the micropolycrystals had good crystal quality which was confirmed by microscopic Raman spectroscopy. This new technique of micropolycrystal formation is attractive for planar isolation processing of GaAs devices with novel structures.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuo Bamba, Yasuo Bamba, Eizo Miyauchi, Eizo Miyauchi, Hiroshi Arimoto, Hiroshi Arimoto, Tetsuo Morita, Tetsuo Morita, Akira Takamori, Akira Takamori, Hisao Hashimoto, Hisao Hashimoto, "Novel Submicron Isolation Technique Of Gaas Active Layer Using Fibi-Mbe", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963684; https://doi.org/10.1117/12.963684


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