30 June 1986 Recent Progress On Submicron Electron Beam Lithography
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Abstract
In order to fabricate submicron pattern, total electron beam (EB) lithography system has been developed. Upper submicron pattern will be realized by optical lithography, which requires reticle with high accuracy. An EB writing system, EBM-130/40, has the performance of drawing capability of 4 M bit DRAM reticle pattern in about 40 minutes. The EB system incorporated with peripheral technologies including data compaction conversion software, reticle inspection system, APC-130R, and EBR-9 resist process can produce advanced reticles of number of about 600 per month. For lower submicron pattern formation, next generation lithography system is required. The EBM-130V is the variable shaped EB system with high acceleration voltage of 50 kV and high dosage of 50 μC/cm2 for direct writing and X-ray mask fabrication for development of the high bit density VLSI pattern. This system makes possible EB/optical combined lithography. Its metrology function allows it to measure X-ray mask distortion.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadahiro Takigawa, Kuniya Shimazaki, Naoki Kusui, "Recent Progress On Submicron Electron Beam Lithography", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963682; https://doi.org/10.1117/12.963682
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