Sub-100nm pattern fabrication in e-beam lithography

Yoshihiro Todokoro; Hiroshi Yamashita; Yuki Yaegashi

doi:10.1117/12.963683

30 June 1986 Sub-100nm pattern fabrication in e-beam lithography

Yoshihiro Todokoro, Hiroshi Yamashita, Yuki Yaegashi

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963683
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Sub-100nm patterns have been fabricated in thick PMMA film on thick silicon substrates at low beam voltages using commercial e-beam machines. A higher contrast and an improved resolution are obtained by using an IPA development. 50-100nm lines are fabricated in 0.5- 1.0μm PMMA film on silicon substrates with 20-25kV e-beams. Practical aspects of sub-100nm pattern fabrication have been estimated. Pattern accuracy, field butting error, and overlay accuracy are better than ±0.1 μm 3 sigma.

Citation Download Citation

Yoshihiro Todokoro, Hiroshi Yamashita, and Yuki Yaegashi "Sub-100nm pattern fabrication in e-beam lithography", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963683

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