30 June 1986 Sub-Micron Pattern Inspection System Using Electron Beam
Author Affiliations +
Abstract
The experimental Electron Beam Inspection System (EBIS) which is used for sub-micron patterns of VLSI circuits is developed and described here. This system is designed to investigate algorithms, which extract defects, and various characteristics to use the electron beam (EB). Following will be mentioned : the configuration of EBIS, description of hardwares and softwares, considerations about pattern alignment, and algorithm extracting defects using the EB.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Kato, K. Saitoh, S. Takeuchi, K. Moriizumi, K. Shibayama, "Sub-Micron Pattern Inspection System Using Electron Beam", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963686; https://doi.org/10.1117/12.963686
PROCEEDINGS
9 PAGES


SHARE
KEYWORDS
Inspection

Lithography

Photomasks

Image processing

X-rays

Semiconducting wafers

Distortion

RELATED CONTENT

Present status of x-ray lithography
Proceedings of SPIE (September 01 1998)
X-Ray Mask Distortion: Process And Pattern Dependence
Proceedings of SPIE (June 30 1986)
X-Ray Lithography For Integrated Circuits - A Review
Proceedings of SPIE (August 08 1977)
Submicron X-Ray Replication Technology For Early Application
Proceedings of SPIE (November 07 1983)
Reflection masks for soft x-ray projection lithography
Proceedings of SPIE (January 01 1992)

Back to Top