30 June 1986 Toward Submicron A New Phase Of Optical Stepper
Author Affiliations +
Abstract
According to the progress of the LSI design rule, optical lithography has steadily opened its new frontier. As the dimension of the LSI design rules becomes the same as that of the resolution limit, the required image quality becomes higher and higher. Optical lithography corresponded to such requirements by the development of the lens design and simulation technique. Some of the new results are shown in this paper, and the new submicron stepper of 0.8 μm shall be introduced as the fruit of such technique. In addition, some of the new developments which correspond to the submicron lithography are introduced. As a consequence, the future of optical lithography shall be discussed in view of the recent aim of 0.5 μm.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akiyoshi Suzuki, Ryusho Hirose, Youichi Hirabayashi, "Toward Submicron A New Phase Of Optical Stepper", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963681; https://doi.org/10.1117/12.963681
PROCEEDINGS
7 PAGES


SHARE
KEYWORDS
Distortion

Optical lithography

Lithography

Semiconducting wafers

Lens design

Scanning electron microscopy

Signal detection

RELATED CONTENT

Triple AIM evaluation and application in advanced node
Proceedings of SPIE (March 08 2016)
Resolution And Overlay Of Submicron I-Line Wafer Steppers
Proceedings of SPIE (January 01 1988)
Spacer process and alignment assessment for SADP process
Proceedings of SPIE (March 13 2012)
Advances In 1:1 Optical Lithography
Proceedings of SPIE (January 01 1987)
Characterization And Setup Techniques For A 5X Stepper
Proceedings of SPIE (August 20 1986)

Back to Top