30 June 1986 X-Ray Mask Distortion: Process And Pattern Dependence
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X-Ray lithography is widely believed to occupy an important future lithographic niche in the vicinity of 0.5 micron and below."] It will be technically easier to achieve resolution and depth of focus with X-Ray than with optical steppers in this lithographic regime. It will be much less expensive to print large volume runners like Dynamic RAMs, microprocessors, or CODECs with X-Ray than with electron beam direct write. However, it is also recognized that distortion in the X-Ray mask membrane may be a major obstacle to the exploitation of this niche, because of the extraordinary registration requirements of submicron design rules.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arnold W. Yanof, Douglas J. Resnick, Constance A. Jankoski, and William A. Johnson "X-Ray Mask Distortion: Process And Pattern Dependence", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); doi: 10.1117/12.963676; https://doi.org/10.1117/12.963676


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