20 August 1986 Aluminum Taper Etching Using Resist/a-Si/Al Structure
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Proceedings Volume 0633, Optical Microlithography V; (1986); doi: 10.1117/12.963719
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States
Abstract
Aluminum taper etching has been developed to improve dielectric step coverage. The seventy degree tapered aluminum pattern is obtained on a flat topography by erosion of a sloped resist mask and high etching anisotropy in RIE. To improve process stability and controllability, resist/a-Si(amorphous silicon)/Al structure was adopted. Amorphous silicon decreases the reflectivity to reduce pattern degradation and has lower etching rate to serve as a secondary etching mask. A simple etching model was proposed to evaluate taper etching controllability and limitation. SEM observations and TEG evaluations show a good dielectric step coverage on tapered aluminum pattern.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Hoga, Masayoshi Kanaya, Sadao Suganuma, "Aluminum Taper Etching Using Resist/a-Si/Al Structure", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963719; https://doi.org/10.1117/12.963719
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KEYWORDS
Etching

Aluminum

Amorphous silicon

Dielectrics

Anisotropy

Polysomnography

Silicon

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