20 August 1986 Controlling Etch Profiles: The Effect Of Controlling Ion Transport
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Abstract
An additional degree of profile control is available when careful control over the parameter Vdc/p is exercised. This parameter may be used alone or in conjunction with photomask erosion, polymer forming chemistries, or other strategies used in varying vertical etch profiles. The effect is demonstrated by utilizing SF6 to etch oxide in an RIE plasma reactor.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Frank C. See, Frank C. See, "Controlling Etch Profiles: The Effect Of Controlling Ion Transport", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963718; https://doi.org/10.1117/12.963718
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