20 August 1986 Excimer Laser-Based Lithography: A Deep Ultraviolet Wafer Stepper
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Proceedings Volume 0633, Optical Microlithography V; (1986); doi: 10.1117/12.963697
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States
Abstract
A deep UV projection system has been developed by modifying a commercial step and repeat exposure tool to operate at 248nm with an all-quartz lens and a KrF excimer laser. The lens is a 5X reduction lens with a minimum field size of 14.5 mm and a numerical aperture which is variable from 0.20 to 0.38. This produces a practical resolution of 0.5μm over the 14.5 mm field, with 0.4μm resolution achievable in a lab situation. Furthermore, by reducing the numerical aperture it is possible to print 0.8Am lines and spaces over a field larger than 14.5 mm with depth of focus greater than ±2μm. The data presented are results of extensive resolution studies as well as applications to real submicron devices. Some of the advantages and limitations of laser-based lithography are discussed, including possible directions for new laser development.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor Pol, James H. Bennewitz, Gary C. Escher, Martin Feldman, Victor A. Firtion, Tanya E. Jewell, Bruce E. Wilcomb, James T. Clemens, "Excimer Laser-Based Lithography: A Deep Ultraviolet Wafer Stepper", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963697; https://doi.org/10.1117/12.963697
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KEYWORDS
Semiconducting wafers

Excimer lasers

Optical lithography

Reticles

Fabry–Perot interferometers

Lithography

Pulsed laser operation

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