20 August 1986 High Resolution Linewidth Control In Optical Microlithography
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Abstract
Stringent process and equipment control becomes significant in high resolution submicrometer optical lithography. The system resolution, linewidth control, step coverage, and minimum feature size are not only dependent on the resist process but also dependent on such factors as equipment stability, system calibration, mask design and fabrication, and alignment marks design. When contact mask aligners (contact printers) or projection printers (5x or 10x wafer steppers) are used, attention to equipment control and utilization is essential to achieve submicrometer patterning and allow the process to achieve high yield at these small critical dimensions.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Catherine M. Ngo, Catherine M. Ngo, } "High Resolution Linewidth Control In Optical Microlithography", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963723; https://doi.org/10.1117/12.963723
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