20 August 1986 Planarization Profile Measurement Using A Confocal Scanning Laser Microscope
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Abstract
The use of planarizing layers to improve the performance of photolithography for micron and submicron devices is being actively explored by a number of semiconductor companies. The usefulness of the procedure depends critically upon the degree to which residual surface undulations can be controlled. This paper describes how a confocal scanning optical microscope may be used to measure surface profiles of planarizing layers and discusses the factors which influence the accuracy of measurement. Experimental measurements, using a SiScan-I system, of resist and P.S.G. planarizing layers are presented, demonstrating a sensitivity to surface height changes of 50 nm. The technique may be improved upon by careful design of the microscope and selection of the imaging wavelength. These factors are discussed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ian R. Smith, Simon D. Bennett, James T. Lindow, Kevin Monahan, "Planarization Profile Measurement Using A Confocal Scanning Laser Microscope", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963721; https://doi.org/10.1117/12.963721
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