20 August 1986 Planarization Profile Measurement Using A Confocal Scanning Laser Microscope
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Abstract
The use of planarizing layers to improve the performance of photolithography for micron and submicron devices is being actively explored by a number of semiconductor companies. The usefulness of the procedure depends critically upon the degree to which residual surface undulations can be controlled. This paper describes how a confocal scanning optical microscope may be used to measure surface profiles of planarizing layers and discusses the factors which influence the accuracy of measurement. Experimental measurements, using a SiScan-I system, of resist and P.S.G. planarizing layers are presented, demonstrating a sensitivity to surface height changes of 50 nm. The technique may be improved upon by careful design of the microscope and selection of the imaging wavelength. These factors are discussed.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ian R. Smith, Ian R. Smith, Simon D. Bennett, Simon D. Bennett, James T. Lindow, James T. Lindow, Kevin Monahan, Kevin Monahan, } "Planarization Profile Measurement Using A Confocal Scanning Laser Microscope", Proc. SPIE 0633, Optical Microlithography V, (20 August 1986); doi: 10.1117/12.963721; https://doi.org/10.1117/12.963721
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